Zirconium disulfide (ZrS₂) and zirconium diselenide (ZrSe₂) are promising materials for future optoelectronics due to indirect band gaps in the visible and near-infrared (NIR) spectral regions. Alloying these materials to produce ZrS_xSe_2−x (x = 0…2) would provide continuous control over key optical and electronic parameters required for device engineering. Here, we present a comprehensive analysis of the phonons and excitons in ZrS_xSe_2−x using low-temperature Raman spectroscopy and room-temperature spectroscopic ellipsometry (SE) measurements.
paper link:https://pubs.rsc.org/en/content/articlehtml/2020/tc/d0tc00731e