OPTOELECTRONIC DEVICES AND TOPOLOGICAL INSULATORS [ODTI] RESEARCH GROUP

PUBLICATIONS FROM THE GROUP

Topological Insulator
[1]. Signature of Lifshitz transition in WTe2.08 nanosheets detected through electrical transport measurements, K. Majhi, V. Kakani, R. Ganesan , P. S. Anil Kumar, Applied Physics Letters , 120 (2022) 093105.
[2]. Fermi level tuning and the robustness of topological surface states against impurity doping in Sn doped Sb2Te2Se, D. Mallick, S. Mandal, R. Ganesan , P. S. Anil Kumar, Applied Physics Letters , 118 ( 2021) 154001.
[3]. Topological insulator n-p-n junctions in a magnetic field, A. Banerjee, A. Sundaresh, S Biswas, R. Ganesan , D. Sen, P. S. Anil Kumar, Nanoscale, 11 ( 2019) 5317.
[4]. Signatures of topological superconductivity in bulk insulating topological insulator BiSbTe1.25Se1.75 in proximity with superconducting NbSe2, A. Banerjee, A. Sundaresh, R. Ganesan , P. S. Anil Kumar, ACS Nano , 12 ( 2018 ) 12665.
[5]. Spatially varying electronic dephasing in three-dimensional topological insulators, A. Banerjee, A. Sundaresh, R. Ganesan , P.S. Anil Kumar, Physical Review B , 98, ( 2018 ) 155423.
[6]. Enhanced coherence and decoupled surface states in topological insulators through structural disorder, A. Banerjee, R. Ganesan , P.S. Anil Kumar, Applied Physics Letters, 113 ( 2018 ) 072105.
[7]. Granular topological insulators, A. Banerjee, O. Deb, K. Majhi, R. Ganesan , D. Sen, P. S. Anil Kumar, Nanoscale, 9 ( 2017) 6755.
[8]. Band Structure of Topological Insulator BiSbTe1.25Se1.75, H. Lohani, P. Mishra, A. Banerjee, K. Majhi, R. Ganesan , U. Manju, D. Topwal, P. S. Anil Kumar, B. R. Sekhar, Scientific Reports , 7 ( 2017 ) 4567.

Photonics and Optoelectronics
[1]. Impact on nonlinear/linear optical and structural parameters in quaternary In15Ag10S15Se60 thin films upon annealing at different temperatures, A. Parida, D. Sahoo, D. Alagarasan, S. Varadharajaperumal, R. Ganesan , R. Naik, Ceramics International , 48 ( 2022 ) 15380.
[2]. Increase in nonlinear susceptibility and refractive index in quaternary In15Sb10S15Se60 thin films upon annealing at different temperatures for photonic applications, A. Parida, D. Sahoo, D. Alagarasan, S. Varadharajaperumal, R. Ganesan , R. Naik, Journal of Alloys and Compounds , 905 ( 2022 ) 164143
[3]. Role of Tellurium on the linear, non-linear optical, structural, morphological properties of Ag60-xSe40Tex films for nonlinear applications, S. Das, P. Priyadarshini, D. Alagarasan, R. Ganesan , S. Varadharajaperumal, R. Naik, Journal of the American Ceramic Society , 105 ( 2022 ) 3469.
[4]. Influence of nanostructured SnS thin films for visible light photodetection, D. Alagarasan, S. Varadharajaperumal, K. Deva Arun Kumar, R. Naik, S. Umrao, M. Shkir, S. AlFaify, R. Ganesan , Optical Materials, 121 ( 2021 ) 111489.
[5]. Observation of high nonlinearity in Bi-doped BixIn35-xSe65 thin films with annealing, P. Priyadarshini, S. Das, D. Alagarasan, S. Varadharajaperumal, R. Ganesan , R. Naik, Scientific Reports , 11 ( 2021 ) 21518.
[6]. Structural and optoelectronic properties change in Bi/In2Se3 heterostructure films by thermal annealing and laser irradiation, P. Priyadarshini, D. Sahoo, D. Alagarasan, S. Varadharajaperumal, R. Ganesan , R. Naik, Journal of Applied Physics, 129 ( 2021 ) 223101.
[7]. In-situ laser irradiation: the kinetics of the changes in the nonlinear/linear optical parameters of As50Se40Sb10 thin films for photonic applications, D. Sahoo, P. Priyadarshini, R. Dandela, D. Alagarasan, S. Varadharajaperumal, R. Ganesan , R. Naik, RSC Advances , 11 ( 2021 ) 16015.
[8]. Toxic-free surface level sulphur doped 1D Ti-Ox-Sy nanorods for superstrate heterojunction CZTS thin-film solar cells, S. Varadharajaperumal, D. Alagarasan, C. Sripan, R. Ganesan , M. N. Satyanarayan, G. Hegde, Materials Research Bulletin , 133 ( 2021 ) 111081.
[9]. Sulfurization and annealing effects on thermally evaporated CZTS films, C. Sripan, V. E. Madhavan, A. K. Viswanath, R. Ganesan , Materials Letters , 189 ( 2017 ) 110.
[10]. Morphology controlled n-type TiO2 and stoichiometry adjusted p-type Cu2ZnSnS4 thin films for photovoltaic applications, S. Varadharajaperumal, C. Sripan, R. Ganesan , G. Hegde, M. N. Satyanarayana, Crystal Growth & Design , 17 (2017 ) 5154.
[11]. The effect of sulfur on the phase formation of Cu2ZnSnS4 solar cell material, C. Sripan, R. Ganesan , E. M. Vinod, A. Kasi Viswanath, Materials Letters , 180 ( 2016 ) 295. )

Glassy Materials
[1]. Direct hexagonal transition of amorphous (Ge2Sb2Te5)0.9Se0.1 thin films, E. M. Vinod, K. Ramesh, R. Ganesan , K. S. Sangunni, Applied Physics Letters , 104 (2014 ) 063505
[2]. Effect of selenium addition on the GeTe phase change memory alloys, E. M. Vinod, A. K. Singh, R. Ganesan , K. S. Sangunni, Journal of Alloys and Compounds , 537 (2012) 127.

For more papers from the group, please check out from Google Scholar

Related Links

Indian Institute of Science [IISc]
Physics Department, IISc

Office Address

Room No. C1-05

Department of Physics

Indian Institute of Science [IISc]

Bangalore-560012

Karnataka, India

Contact Us

Telephone No.: +91-80-2293-3287

e-mail : gans@iisc.ac.in