Dr. Binita Tongram
Mobile No: +919082759364/+917506112074
Room No:A1-18
Email id: binitatongbram@gmail.com
Website:https://www.researchgate.net/profile/Binita-Tongbram-2
Education Qualification:
M.Tech in Electronics and Communication Engineering, Tezpur University.
M.Tech Project at Institute of Radio Physics and Electronics, Calcutta University.
Ph.D. in Centre for Research in Nano Technology and Science, IIT Bombay.
Award:
Excellence in Ph.D. Research Award, IIT Bombay (2019)
Research Highlight:
Currently, I am working on the synthesis of CdSe Nanoplatelets and will be studying the electrical, structural, and optical properties of CdSe-Nanoplatelets with single-layer graphene hybrid devices. Hybrid devices consisting of high-confined quantum structures and 2D materials like graphene and MoS2 have been extensively studied for photodetectors, photovoltaic, and single-photon emitters.
My doctoral research was on the “A Detailed Investigation of Single-, Bi- and Multi-layer Quantum Dot Heterostructures Grown by Molecular Beam Epitaxy for Enhancing Performance Characteristics of Future InAs/GaAs Quantum Dot Infrared Photodetectors (QDIPs)”, which involved detailed structural characterization of InAs QDs through HRTEM and HRXRD, optical characterization of InAs QDs through room temperature PL and PLE, and electrical characterization of QDIP.
My Ph.D. thesis objective was to achieve high homogeneity in QD size and shape with equal lateral QD spacing in Single layer, Bilayer, and vertically coupled multilayer QDs in order to achieve state-of-the-art QDIP performance by solving the aforementioned problems, namely interdiffusion, segregation, QD dissolubility, strain, defects, and dislocations, misalignment. We achieved the highest peak detectivity of 10 × 1010 cm Hz1/2/W for single-pixel devices quaternary-capped 30-layer QD heterostructures.
During my Ph.D. program, I was serving as a teaching assistantship in Field emission Transmission Electron Microscopy, System Model TECNAI TEM F30, and Rigaku SmartLab High-Resolution X-ray Diffractometer for 2 and a half yrs.