Dr. T. Phanindra Sai
Postdoctoral Research Associate
Ph. D. – Indian Institute of Science
Tel: +91 (0)80 2293 2059
Fax: +91 (0)80 2360 2602
Email: phanindrasai@iisc.ac.in
Research Areas
Graphene due to its two-dimensional nature has many interesting and desirable properties for device applications. My research work involves
- Understanding the origin of electrical noise in a single layer of graphene and contribution of substrate and contacts to the noise.
- Fabrication of ultra sensitive optoelectronic devices of graphene/MoS2 hybrid structure by combining best properties of graphene and MoS2.
- Understanding the plasmonic effects of semiconducting nanoparticles arranged on graphene surface using Langmuir Blodgett technique.
- Sensitive electrical measurements on clean graphene flakes, obtained by in-situ exfoliation to explore graphene edge states.
- Fabrication of complicated structures such as airbridge top metallic top gate, airbridge point contacts using state of the art e-beam lithographic techniques.
